2015年10月19日星期一

MG25Q6ES42 igbt module electronic components datasheet and inventory




Part #: MG25Q6ES42
Part Category: Transistors
Manufacturer: Toshiba America, Inc.
Description: 25A, 1200V, N-CHANNEL IGBT
Status Discontinued
Collector Current-Max (IC) 25 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
JESD-30 Code R-PUFM-D17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form SOLDER LUG
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 4 V
Additional Feature HIGH SPEED



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