MG200Q2YS40 igbt module electronic components datasheet and inventory

Part #: MG200Q2YS40
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 200A, 1200V, N-CHANNEL IGBT
Mfr Package Description 2-109C1A, 7 PIN
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-emitter Thr Voltage-Max 6 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1300 W
Power Dissipation-Max (Abs) 1300 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 4 V
Additional Feature HIGH SPEED



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