FZ1200R33KF2C igbt module electronic components datasheet and inventory

Part #: FZ1200R33KF2C
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 2000A, 3300V, N-CHANNEL IGBT
Mfr Package Description MODULE-9
REACH Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 2000 A
Collector-emitter Voltage-Max 3300 V
Configuration PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X9
Number of Elements 3
Number of Terminals 9
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 14500 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1900 ns
Turn-on Time-Nom (ton) 480 ns
VCEsat-Max 4.25 V



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