BSM75GD120DLC igbt module electronic components datasheet and inventory

Part #: BSM75GD120DLC
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 125A, 1200V, N-CHANNEL IGBT
Mfr Package Description ECONO-39
Status Transferred
Collector Current-Max (IC) 125 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X39
Number of Elements 6
Number of Terminals 39
Operating Temperature-Max 125 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
VCEsat-Max 2.6 V



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CM1000HA-28H igbt module electronic components datasheet and inventory

Part #: CM1000HA-28H
Part Category: Transistors
Manufacturer: Mitsubishi Electric & Electronics USA, Inc.
Description: 1000A, 1400V, N-CHANNEL IGBT
Status Active-Unconfirmed
Case Connection ISOLATED
Collector Current-Max (IC) 1000 A
Collector-emitter Voltage-Max 1400 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code S-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1200 ns
Turn-on Time-Nom (ton) 800 ns
VCEsat-Max 3.1 V
Additional Feature SUPER FAST RECOVERY



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MG150J2YS50 igbt module electronic components datasheet and inventory

Part #: MG150J2YS50
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 150A, 600V, N-CHANNEL IGBT
Mfr Package Description 2-95A1A, 7 PIN
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Fall Time-Max (tf) 300 ns
Gate-emitter Thr Voltage-Max 8 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 780 W
Power Dissipation-Max (Abs) 780 W
Qualification Status Not Qualified
Rise Time-Max (tr) 300 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 200 ns
Turn-off Time-Max (toff) 400 ns
Turn-on Time-Nom (ton) 150 ns
Turn-on Time-Max (ton) 300 ns
VCEsat-Max 2.7 V
Additional Feature HIGH SPEED



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FZ1200R33KF2C igbt module electronic components datasheet and inventory

Part #: FZ1200R33KF2C
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 2000A, 3300V, N-CHANNEL IGBT
Mfr Package Description MODULE-9
REACH Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 2000 A
Collector-emitter Voltage-Max 3300 V
Configuration PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X9
Number of Elements 3
Number of Terminals 9
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 14500 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1900 ns
Turn-on Time-Nom (ton) 480 ns
VCEsat-Max 4.25 V



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MG500Q1US1 igbt module electronic components datasheet and inventory

Part #: MG500Q1US1
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 500A, 1200V, N-CHANNEL IGBT
Mfr Package Description 2-109A4A, 4 PIN
Status Discontinued
Case Connection ISOLATED
Collector Current-Max (IC) 500 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-emitter Thr Voltage-Max 6 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2900 W
Power Dissipation-Max (Abs) 2400 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 400 ns
VCEsat-Max 4 V
Additional Feature HIGH SPEED



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STGP20NC60V igbt module electronic components datasheet and inventory

Part #: STGP20NC60V
Part Category: Transistors
Manufacturer: STMicroelectronics, Inc.
Description: 60A, 600V, N-CHANNEL IGBT, TO-220AB
Mfr Package Description ROHS COMPLIANT, TO-220, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Collector Current-Max (IC) 60 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE
Gate-emitter Thr Voltage-Max 5.75 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 280 ns
Turn-on Time-Nom (ton) 42.5 ns



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FZ1200R12KF5 igbt module electronic components datasheet and inventory

Manufacturer Part #:
FZ1200R12KF5
Manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT 1200V 1200A
Lifecycle: Obsolete
Product Category: IGBT Modules
Brand: Infineon Technologies
Factory Pack Quantity: 2



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CM100DY-12H igbt module electronic components datasheet and inventory

Part #: CM100DY-12H
Part Category: Transistors
Manufacturer: Mitsubishi Electric & Electronics USA, Inc.
Description: 100A, 600V, N-CHANNEL IGBT
Status Active-Unconfirmed
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 200 ns
Turn-on Time-Nom (ton) 120 ns
VCEsat-Max 2.8 V
Additional Feature SUPER FAST RECOVERY



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FP40R12KT3 igbt module electronic components datasheet and inventory

Part #: FP40R12KT3
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 55A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-24
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 55 A
Collector-emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X24
Number of Elements 7
Number of Terminals 24
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 210 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 140 ns
VCEsat-Max 2.3 V



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MG400Q1US41 igbt module electronic components datasheet and inventory

Part #: MG400Q1US41
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 400A, 1200V, N-CHANNEL IGBT
Mfr Package Description 2-109A4A, 4 PIN
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 400 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-emitter Thr Voltage-Max 6 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2400 W
Power Dissipation-Max (Abs) 2400 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 4 V
Additional Feature HIGH SPEED



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CM30TF-12H igbt module electronic components datasheet and inventory

Part #: CM30TF-12H
Part Category: Transistors
Manufacturer: Powerex, Inc. - PA
Description: 30A, 600V, N-CHANNEL IGBT
Status Discontinued
Case Connection ISOLATED
Collector Current-Max (IC) 30 A
Collector-emitter Voltage-Max 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-D17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form SOLDER LUG
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 2.8 V



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FS100R12KE3 igbt module electronic components datasheet and inventory

Part #: FS100R12KE3
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 140A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-35
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 140 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X35
Number of Elements 6
Number of Terminals 35
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 480 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 340 ns
VCEsat-Max 2.15 V



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BSM100GT120DN2 igbt module electronic components datasheet and inventory

Part #: BSM100GT120DN2
Part Category: Transistors
Manufacturer: Siemens Process Instrumentation
Description: 150A, 1200V, N-CHANNEL IGBT
Status Discontinued
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-emitter Voltage-Max 1200 V
Configuration 3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-T39
Number of Elements 6
Number of Terminals 39
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position UPPER
Transistor Application GENERAL PURPOSE SWITCHING
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 470 ns
Turn-on Time-Nom (ton) 240 ns
Additional Feature FAST



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BSM75GP60 igbt module electronic components datasheet and inventory

Part #: BSM75GP60
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 100A, 600V, N-CHANNEL IGBT
Status Transferred
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-emitter Voltage-Max 600 V
Configuration COMPLEX
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X35
Number of Elements 7
Number of Terminals 35
Operating Temperature-Max 125 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 310 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
VCEsat-Max 2.45 V



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STGF3NC120HD igbt module electronic components datasheet and inventory

Part #: STGF3NC120HD
Part Category: Transistors
Manufacturer: STMicroelectronics, Inc.
Description: 6A, 1200V, N-CHANNEL IGBT, TO-220AB
Mfr Package Description ROHS COMPLIANT, TO-220FP, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 6 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 5 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application GENERAL PURPOSE SWITCHING
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 680 ns
Turn-on Time-Nom (ton) 18.5 ns



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MG25Q6ES42 igbt module electronic components datasheet and inventory

Part #: MG25Q6ES42
Part Category: Transistors
Manufacturer: Toshiba America, Inc.
Description: 25A, 1200V, N-CHANNEL IGBT
Status Discontinued
Collector Current-Max (IC) 25 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
JESD-30 Code R-PUFM-D17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form SOLDER LUG
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 4 V
Additional Feature HIGH SPEED



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BSM300GB120DLC igbt module electronic components datasheet and inventory

Part #: BSM300GB120DLC
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 625A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-7
Status Transferred
Case Connection ISOLATED
Collector Current-Max (IC) 625 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2500 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 650 ns
Turn-on Time-Nom (ton) 190 ns
VCEsat-Max 2.6 V



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MG200Q2YS40 igbt module electronic components datasheet and inventory

Part #: MG200Q2YS40
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 200A, 1200V, N-CHANNEL IGBT
Mfr Package Description 2-109C1A, 7 PIN
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-emitter Thr Voltage-Max 6 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1300 W
Power Dissipation-Max (Abs) 1300 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 4 V
Additional Feature HIGH SPEED



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FZ800R12KL4C igbt module electronic components datasheet and inventory

Part #: FZ800R12KL4C
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: IGBT
Mfr Package Description MODULE-7
REACH Compliant Yes
Status Active
Collector Current-Max (IC) 1300 A
Collector-emitter Voltage-Max 1200 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 1
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 5600 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
VCEsat-Max 2.6 V



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FS150R12KE3 igbt module electronic components datasheet and inventory

Part #: FS150R12KE3
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 200A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-35
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X35
Number of Elements 6
Number of Terminals 35
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 700 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 340 ns
VCEsat-Max 2.2 V

Get  quote for FS150R12KE3 igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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CM600DY-24A igbt module electronic components datasheet and inventory

Part #: CM600DY-24A
Part Category: Transistors
Manufacturer: Powerex, Inc. - PA
Description: 600A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-7
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 600 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON

Get  quote for CM600DY-24A igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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CM600DU-24NFH igbt module electronic components datasheet and inventory

Part #: CM600DU-24NFH
Part Category: Transistors
Manufacturer: Mitsubishi Electric & Electronics USA, Inc.
Description: 600A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-7
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 600 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3750 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 6.5 V

Get  quote for CM600DU-24NFH igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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BSM300GB60DLC igbt module electronic components datasheet and inventory

Part #: BSM300GB60DLC
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 375A, 600V, N-CHANNEL IGBT
Status Transferred
Case Connection ISOLATED
Collector Current-Max (IC) 375 A
Collector-emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 125 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 402 ns
Turn-on Time-Nom (ton) 176 ns
VCEsat-Max 2.45 V

Get  quote for BSM300GB60DLC igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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CM300DY-24NF igbt module electronic components datasheet and inventory

Part #: CM300DY-24NF
Part Category: Transistors
Manufacturer: Mitsubishi Electric & Electronics USA, Inc.
Description: 300A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-7
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 300 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1130 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 2.5 V

Get  quote for CM300DY-24NF igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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FP15R12KE3 igbt module electronic components datasheet and inventory

Part #: FP15R12KE3
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 27A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-23
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 27 A
Collector-emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 89 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 508 ns
Turn-on Time-Nom (ton) 97 ns
VCEsat-Max 2.15 V

Get  quote for FP15R12KE3 igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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CM400DY-66H igbt module electronic components datasheet and inventory

Part #: CM400DY-66H
Part Category: Transistors
Manufacturer: Powerex, Inc. - PA
Description: 400A, 3300V, N-CHANNEL IGBT
Mfr Package Description POWER MODULE-9
Status Active
Collector Current-Max (IC) 400 A
Collector-emitter Voltage-Max 3300 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-MUFM-X9
Number of Elements 2
Number of Terminals 9
Operating Temperature-Max 150 Cel
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3470 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 3000 ns
Turn-on Time-Nom (ton) 1000 ns
VCEsat-Max 5.72 V

Get  quote for CM400DY-66H igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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FS450R17KE3 igbt module electronic components datasheet and inventory

Part #: FS450R17KE3
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 605A, 1700V, N-CHANNEL IGBT
Mfr Package Description ECONOPACK-29
Status Transferred
Case Connection ISOLATED
Collector Current-Max (IC) 605 A
Collector-emitter Voltage-Max 1700 V
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X29
Number of Elements 6
Number of Terminals 29
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1300 ns
Turn-on Time-Nom (ton) 400 ns

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7MBR25SA120 igbt module electronic components datasheet and inventory

Part #: 7MBR25SA120
Part Category: Transistors
Manufacturer: Fuji Electric Corp. of America
Description: 25A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-24
Status Discontinued
Case Connection ISOLATED
Collector Current-Max (IC) 25 A
Collector-emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X24
Number of Elements 7
Number of Terminals 24
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450 ns
Turn-on Time-Nom (ton) 350 ns
VCEsat-Max 2.6 V

Get  quote for 7MBR25SA120 igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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FF1400R17IP4 igbt module electronic components datasheet and inventory

Part #: FF1400R17IP4
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 1700V, N-CHANNEL IGBT
Mfr Package Description MODULE-12
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 1400 A
Collector-emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X12
Number of Elements 2
Number of Terminals 12
Operating Temperature-Max 175 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 9550 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 2190 ns
Turn-on Time-Nom (ton) 1030 ns
VCEsat-Max 2.2 V

Get  quote for FF1400R17IP4 igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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FS450R12KE3 igbt module electronic components datasheet and inventory

Part #: FS450R12KE3
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 600A, 1200V, N-CHANNEL IGBT
Mfr Package Description ECONOPACK-29
Status Transferred
Case Connection ISOLATED
Collector Current-Max (IC) 600 A
Collector-emitter Voltage-Max 1200 V
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X29
Number of Elements 6
Number of Terminals 29
Operating Temperature-Max 125 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2000 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 810 ns
Turn-on Time-Nom (ton) 400 ns
VCEsat-Max 2.1 V

Get  quote for FS450R12KE3 igbt module electronic parts, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman also will find it an response you in 24 work hours.
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