BSM75GD120DLC igbt module electronic components datasheet and inventory

Part #: BSM75GD120DLC
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 125A, 1200V, N-CHANNEL IGBT
Mfr Package Description ECONO-39
Status Transferred
Collector Current-Max (IC) 125 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X39
Number of Elements 6
Number of Terminals 39
Operating Temperature-Max 125 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
VCEsat-Max 2.6 V



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CM1000HA-28H igbt module electronic components datasheet and inventory

Part #: CM1000HA-28H
Part Category: Transistors
Manufacturer: Mitsubishi Electric & Electronics USA, Inc.
Description: 1000A, 1400V, N-CHANNEL IGBT
Status Active-Unconfirmed
Case Connection ISOLATED
Collector Current-Max (IC) 1000 A
Collector-emitter Voltage-Max 1400 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code S-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1200 ns
Turn-on Time-Nom (ton) 800 ns
VCEsat-Max 3.1 V
Additional Feature SUPER FAST RECOVERY



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MG150J2YS50 igbt module electronic components datasheet and inventory

Part #: MG150J2YS50
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 150A, 600V, N-CHANNEL IGBT
Mfr Package Description 2-95A1A, 7 PIN
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Fall Time-Max (tf) 300 ns
Gate-emitter Thr Voltage-Max 8 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 780 W
Power Dissipation-Max (Abs) 780 W
Qualification Status Not Qualified
Rise Time-Max (tr) 300 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 200 ns
Turn-off Time-Max (toff) 400 ns
Turn-on Time-Nom (ton) 150 ns
Turn-on Time-Max (ton) 300 ns
VCEsat-Max 2.7 V
Additional Feature HIGH SPEED



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FZ1200R33KF2C igbt module electronic components datasheet and inventory

Part #: FZ1200R33KF2C
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 2000A, 3300V, N-CHANNEL IGBT
Mfr Package Description MODULE-9
REACH Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 2000 A
Collector-emitter Voltage-Max 3300 V
Configuration PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X9
Number of Elements 3
Number of Terminals 9
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 14500 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1900 ns
Turn-on Time-Nom (ton) 480 ns
VCEsat-Max 4.25 V



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MG500Q1US1 igbt module electronic components datasheet and inventory

Part #: MG500Q1US1
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 500A, 1200V, N-CHANNEL IGBT
Mfr Package Description 2-109A4A, 4 PIN
Status Discontinued
Case Connection ISOLATED
Collector Current-Max (IC) 500 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-emitter Thr Voltage-Max 6 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2900 W
Power Dissipation-Max (Abs) 2400 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 400 ns
VCEsat-Max 4 V
Additional Feature HIGH SPEED



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STGP20NC60V igbt module electronic components datasheet and inventory

Part #: STGP20NC60V
Part Category: Transistors
Manufacturer: STMicroelectronics, Inc.
Description: 60A, 600V, N-CHANNEL IGBT, TO-220AB
Mfr Package Description ROHS COMPLIANT, TO-220, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Collector Current-Max (IC) 60 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE
Gate-emitter Thr Voltage-Max 5.75 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 280 ns
Turn-on Time-Nom (ton) 42.5 ns



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FZ1200R12KF5 igbt module electronic components datasheet and inventory

Manufacturer Part #:
FZ1200R12KF5
Manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT 1200V 1200A
Lifecycle: Obsolete
Product Category: IGBT Modules
Brand: Infineon Technologies
Factory Pack Quantity: 2



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